BUZ101S - Siemens Semiconductor Group

BUZ101S Power Transistor

Preliminary data BUZ 101 S SPP22N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Type BUZ 101 S Pin 2 D Pin 3 S VDS 55 V ID 22 A RDS(on) 0.06 Ω Package TO-220 AB Ordering Code Q67040-S4013-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 22 16 Unit.

Features

, junction - ambient IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 ≤ 2.7 ≤ 62 55 / 175 / 56 K/W Unit °C Tj Tstg RthJC RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 55 3 0.1 10 0.04 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 40 µA Zero gate voltage drain current IDSS 0.1 1 100 µA VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj .