BUP307D Siemens Semiconductor Group IGBT Datasheet, en stock, prix

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BUP307D

Siemens Semiconductor Group
BUP307D
BUP307D BUP307D
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Part Number BUP307D
Manufacturer Siemens Semiconductor Group
Description BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 307D Ma...
Features thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD ≤ 0.42 ≤ 1.25 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 - V VGE = VCE, IC = 0.35 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 25 A, Tj = 25 °C VGE = 15 V, IC = 25 A, Tj = 125 °C VGE = 15 V, IC = 42 A, Tj = 25 °C VGE = 15 V, IC = 42 A, Tj = 125 °C Zero gate voltage collector current ICES 0.5 mA nA 100 VCE =...

Document Datasheet BUP307D Data Sheet
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