VBT3060G-E3 |
Part Number | VBT3060G-E3 |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TO-220AB TM... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Not recommended for PCB bottom side wave mounting • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: for... |
Document |
VBT3060G-E3 Data Sheet
PDF 143.16KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VBT3060C |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VBT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VBT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | VBT3045BP-M3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | VBT3045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |