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EMD10N06A |
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| Part Number | EMD10N06A |
| Manufacturer | Excelliance MOS |
| Description | EMD10N06A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 10mΩ ID 53A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ... |
| Features |
age limited.
UNIT V A
mJ W °C
UNIT °C / W
2014/8/15 p.1
EMD10N06A
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 20A
... |
| Document |
 EMD10N06A Data Sheet
PDF 218.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMD10N06E |
Excelliance MOS |
MOSFET |
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| 2 | EMD10N70F |
Excelliance MOS |
MOSFET |
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| 3 | EMD10 |
JCET |
Dual Digital Transistors |
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| 4 | EMD11N15E |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| 5 | EMD11N15F |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|