BVDSS 150V RDSON (MAX.) 11.5mΩ ID 45A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanc.
/ W 2022/12/19 p.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMD11N15F LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 20A VDS = 5V, ID = 20A DYNAMIC 150 V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | EMD11N15E |
Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
2 | EMD10 |
JCET |
Dual Digital Transistors | |
3 | EMD10N06A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
4 | EMD10N06E |
Excelliance MOS |
MOSFET | |
5 | EMD10N70F |
Excelliance MOS |
MOSFET | |
6 | EMD12 |
Rohm |
Power management (dual digital transistors) | |
7 | EMD12 |
JCET |
Dual Digital Transistors | |
8 | EMD12 |
Jin Yu Semiconductor |
General purpose transistors | |
9 | EMD12N06A |
Excelliance MOS |
MOSFET | |
10 | EMD12N06H |
Excelliance MOS |
MOSFET | |
11 | EMD12N10E |
Excelliance MOS |
MOSFET | |
12 | EMD12N10H |
Excelliance MOS |
MOSFET |