EMD11N15E - Excelliance MOS

EMD11N15E Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-CH BVDSS 150V RDSON (MAX.)@VGS=10V 11.0mΩ ID @TC=25℃ 120A ID @TA=25℃ 10A Single N Channel MOSFET Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Continuous Drain Current Pul.

Features

limited by maximum junction temperature. 2Duty cycle < 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL MAXIMUM 0.45 62.5 UNIT °C/W 2021/3/15 P.1 A.0 EMD11N15E ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resistance1,4 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250uA 15.