TSP10N65M |
Part Number | TSP10N65M |
Manufacturer | Truesemi |
Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
Features |
• 10.0A,650V,Max.RDS(on)=1.0Ω @ VGS =10V • Low gate charge(typical 48nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25℃ TC = 100℃ Pulsed Drain Current (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25℃) -Derate above 25℃ Operating and Storage Temperature Range... |
Document |
TSP10N65M Data Sheet
PDF 1.22MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSP10N60C |
Thinki Semiconductor |
600V Heatsink N-Channel Type Power MOSFET | |
2 | TSP10N60M |
Truesemi |
600V N-Channel MOSFET | |
3 | TSP10N60S |
Truesemi |
N-Channel MOSFET | |
4 | TSP10H200S |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
5 | TSP10H45S |
Taiwan Semiconductor |
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