Features
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TERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS VGS(th)
VGS = 0V, ID = 250A VDS = VGS, ID = 250A
600 V
2 2.8 4
IGSS
VDS = 0V, VGS = ±30V
±100 nA
VDS = 600V, VGS = 0V , TC = 25 °C IDSS
VDS = 480V, VGS = 0V , TC = 100 °C
1 A
10
REV 1.0
G-17-4
1
NIKO-SEM
N-Channel Enhancement Mode
P1260ETF:TO-220F P1260ETFS:TO-220FS
Field Effect Transistor Halogen-Free & Lead-Free
Drain-Source On-State Resistance1 Forw...
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