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STPSC20H065C |
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| Part Number | STPSC20H065C |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a ... |
| Features |
No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited fo... |
| Document |
 STPSC20H065C Data Sheet
PDF 164.82KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STPSC20H065C-Y |
STMicroelectronics |
Automotive 650V power Schottky silicon carbide diode |
|
| 2 | STPSC20H065CWLY |
STMicroelectronics |
Automotive 20A 650V power Schottky silicon carbide diode |
|
| 3 | STPSC20H12 |
STMicroelectronics |
power Schottky silicon carbide diode |
|
| 4 | STPSC20H12-Y |
STMicroelectronics |
silicon carbide power Schottky diode |
|
| 5 | STPSC20H12CWY |
STMicroelectronics |
power Schottky silicon carbide diode |
|