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3DG110 |
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| Part Number | 3DG110 |
| Manufacturer | Qunli Electric |
| Description | 3DG101, 3DG110, 3DG111 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weigh... |
| Features |
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Specifications
(Ta = 25°C )
Parameter name
Symbols Unit
3DG101
3DG110
3DG111
C-B Breakdown Voltage V(BR)CBO V
C-E Breakdown Voltage V(BR)CEO V
E-Base Breakdown Voltage V(BR)EBO V
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction T... |
| Document |
 3DG110 Data Sheet
PDF 44.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DG111 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 2 | 3DG100 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 3 | 3DG1008 |
LZG |
SILICON NPN TRANSISTOR |
|
| 4 | 3DG101 |
ETC |
Silicon NPN high frequency low power transistor |
|
| 5 | 3DG101 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|