CS8N25FA9 - Huajing Microelectronics

CS8N25FA9 Silicon N-Channel Power MOSFET

CS8N25F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 250 8 30 0.4 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficienc.

Features

l Fast Switching l Low ON Resistance(Rdson≤0.47Ω) l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C.