BR8N60(CS8N60) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 8A ID(Tc=100℃) 4.6 A IDM 30 A VGSS ±30.
Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 8A ID(Tc=100℃) 4.6 A IDM 30 A VGSS ±30 V EAS 230 mJ EAR 10 mJ IAR 7.5 A PD(Tc=25℃) 48 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=600V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=3.75A gFS VDS=40V ID=3.75A VSD VGS=0V IS=7.5A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=300V ID=7.5A RG=25Ω tf.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS8N60A8D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS8N60A8H |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
3 | CS8N60ARD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS8N60F |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
5 | CS8N60FA9D |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
6 | CS8N60FA9H |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
7 | CS8N65A0H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
8 | CS8N65A8H |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
9 | CS8N65ARR |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
10 | CS8N65F |
FOSHAN BLUE ROCKET |
N-Channel MOSFET | |
11 | CS8N65FA9H |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET | |
12 | CS8N25A4H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |