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CS3N50B4HY |
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| Part Number | CS3N50B4HY |
| Manufacturer | Huajing Microelectronics |
| Description | VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor
Absolute（Tc= 25℃otherwise specified Unless）
Symbol Parameter
VDSS
Drain-to-Source Voltage
ID
IDMa1
VGS EAS a2 EAR a1 IAR a1 dv/dt a3
Continuous Drain Current Continuous Drain Current TC = 100 °C ... |
| Document |
 CS3N50B4HY Data Sheet
PDF 250.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS3N50B4 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 2 | CS3N50B3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 3 | CS3N50B3HY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 4 | CS3N20ATH |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 5 | CS3N25 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|