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CS3N80A3 |
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| Part Number | CS3N80A3 |
| Manufacturer | Huajing Microelectronics |
| Description | CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) ... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pul... |
| Document |
 CS3N80A3 Data Sheet
PDF 717.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS3N80A4 |
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| 2 | CS3N80A8 |
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Silicon N-Channel Power MOSFET |
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| 3 | CS3N80ARH |
Huajing Microelectronics |
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| 4 | CS3N80FA9 |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
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| 5 | CS3N20ATH |
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