CS6N60A3HDY |
Part Number | CS6N60A3HDY |
Manufacturer | Huajing Microelectronics |
Description | CS6N60 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche... |
Features |
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
VESD(G-S)
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pul... |
Document |
CS6N60A3HDY Data Sheet
PDF 230.20KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS6N60A3D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS6N60A3TY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS6N60A4D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS6N60A4H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS6N60A4TY |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |