2SD2422 |
Part Number | 2SD2422 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 3A ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V ·Minimum Lot-... |
Features |
5℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 3mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 3V
2SD2422
MIN TYP. MAX UNIT
100
V
100
V
6
V
1.5
V
2.0
V
10
μA
3.0
mA
1000
20000
Notice:... |
Document |
2SD2422 Data Sheet
PDF 194.23KB |
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