AP70SL250AI |
Part Number | AP70SL250AI |
Manufacturer | Advanced Power Electronics |
Description | AP70SL250A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an ... |
Features |
rent, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1
+20 V 15 A 9.6 A 38 A
dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6
50 34.7 1.92 168 15
V/ns W W mJ V/ns
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value 3.6 65
Units ℃/W ℃/W
Data & specific... |
Document |
AP70SL250AI Data Sheet
PDF 67.92KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP70SL250AS |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP70SL1K4AH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP70SL1K4AI |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP70SL1K4AJB |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP70SL380AH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |