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TIC246N |
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| Part Number | TIC246N |
| Manufacturer | Inchange Semiconductor |
| Description | isc Triacs TIC246N FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe... |
| Features |
·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(RMS) RMS on-state current (full sine wave)TC=70℃ 16 A ITSM Non-repetitive peak on-state current 125 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~125 ℃ Rth(j-c) Thermal resistance, junction to case ... |
| Document |
 TIC246N Data Sheet
PDF 162.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIC246 |
Power Innovations Limited |
SILICON TRIACS |
|
| 2 | TIC246 |
INCHANGE |
Triac |
|
| 3 | TIC246B |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 4 | TIC246C |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 5 | TIC246D |
Inchange Semiconductor |
Triacs |
|