TIC246C - Comset Semiconductors

TIC246C (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MAXIMUM RATINGS http://www.DataSheet4U.net/ Symbol VDRM IT(RMS) ITSM IGM TC Tstg TL Ratings B Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-s.

Features

0 to +110 -40 to +125 230 THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance COMSET SEMICONDUCTORS Value ≤ 1.9 ≤ 62.5 Unit °C/W 1|3 30/10/2012 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Test Condition(s) Min ±1.2 Typ 12 -19 -16 34 0.8 -0.8 -0.8 0.9 22 -22 ±1.4 ±400 ±100 ±9 Max ±2 50 -50 -50 2 -2 -2 2 40 Unit mA IGT VGT IH IL VTM dv/dt di/dt dv/dt© .