TIC246 SERIES SILICON TRIACS Copyright © 2000, Power Innovations Limited, UK DECEMBER 1971 - REVISED JUNE 2000 G G G G G G High Current Triacs 16 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 125 A Peak Current Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. MDC2ACA TO-220 PACKAGE (TOP VIEW) MT1 M.
ionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 400 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM Repetitive peak off-state current G.
·High current Triacs ·16A RMS ,125A Peak Current ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 50m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIC246B |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
2 | TIC246C |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
3 | TIC246D |
Inchange Semiconductor |
Triacs | |
4 | TIC246D |
Power Innovations Limited |
SILICON TRIACS | |
5 | TIC246D |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
6 | TIC246E |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
7 | TIC246M |
Inchange Semiconductor |
Triacs | |
8 | TIC246M |
Power Innovations Limited |
SILICON TRIACS | |
9 | TIC246M |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
10 | TIC246N |
Inchange Semiconductor |
Triacs | |
11 | TIC246N |
Power Innovations Limited |
SILICON TRIACS | |
12 | TIC246N |
Comset Semiconductors |
(TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |