IS45S16100F |
Part Number | IS45S16100F |
Manufacturer | ISSI |
Description | ISSI’s 16Mb Synchronous DRAM IS42S16100F, IS45S16100F and IS42VS16100F are each organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve highspeed data tra... |
Features |
• Clock frequency: IS42/45S16100F: 200, 166, 143 MHz IS42VS16100F: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single power supply: IS42/45S16100F: Vdd/Vddq = 3.3V IS42VS16100F: Vdd/Vddq = 1.8V • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 2048 refresh cycles every 32 ms • Random column address every clock cycle • Programmable CAS latency (2,... |
Document |
IS45S16100F Data Sheet
PDF 1.16MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IS45S16100C1 |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM | |
2 | IS45S16100E |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM | |
3 | IS45S16100H |
ISSI |
16Mb SYNCHRONOUS DYNAMIC RAM | |
4 | IS45S16160C |
Integrated Silicon Solution |
256 Mb Single Data Rate Synchronous DRAM | |
5 | IS45S16160D |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM |