80N06 Inchange Semiconductor N-Channel MOSFET Datasheet, en stock, prix

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80N06

Inchange Semiconductor
80N06
80N06 80N06
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Part Number 80N06
Manufacturer Inchange Semiconductor
Description ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ...
Features DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=80A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=40A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 MIN TYPE MAX UNIT 60 V 2.0 4.0 V 1.5 V 0.01 Ω ±100 nA 250 µA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our prod...

Document Datasheet 80N06 Data Sheet
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