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2SK2080-01 |
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| Part Number | 2SK2080-01 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switchin... |
| Features |
℃)
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward on-Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
tr
Rise Time
td(on) Turn-on Delay Time
tf
Fall Time
td(off) Turn-off Delay Time
CONDITIONS VGS= 0; ID= 1mA VDS= VGS; ID=1mA IF= 8A ;VGS= 0 VGS= 10V; ID= 8A VGS= ±30V;VDS= 0 VDS= 500V; VGS= 0 VDS=25V; VGS=0V; fT=1MHz
VGS=10V; ID=15A; VDD=300V; RL=25Ω
MIN TYPE MAX UNIT
500
... |
| Document |
 2SK2080-01 Data Sheet
PDF 222.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2080-01R |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 2 | 2SK2080 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | 2SK208 |
Toshiba Semiconductor |
Silicon N Channel Junction Type Field Effect Transistor |
|
| 4 | 2SK2081-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 5 | 2SK2081-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|