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2SK1356 |
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| Part Number | 2SK1356 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed ... |
| Features |
ce Breakdown Voltage VGS=0; ID= 10mA
900
V
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
1.5
3.5
V
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A
3.3
4.3
Ω
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=900V; VGS= 0
300
uA
VSD
Diode Forward Voltage
IF=3A; VGS=0
2.0
V
tr
Rise time
55
120
ns
ton
Turn-on time
tf
Fall time
VGS=10V;ID=1.5A;RL=50Ω
70
165
ns
60
120
ns
toff
Turn-off time
280 550
ns
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any ti... |
| Document |
 2SK1356 Data Sheet
PDF 227.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK135 |
Hitachi Semiconductor |
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|
| 2 | 2SK1350 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 3 | 2SK1351 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 4 | 2SK1352 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 5 | 2SK1356 |
Toshiba |
N-Channel MOSFET |
|