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3DD8B |
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| Part Number | 3DD8B |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS ·Designed for power amplifier, low speed switching and regula... |
| Features |
lector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
ICEO Collector Cutoff Current
VCE= 20V; IB= 0
hFE DC Current Gain
IC= 5A; VCE= 5V
MIN TYP. MAX UNIT 50 V 5V 50 V
2.0 V 2.0 mA 10
isc website：www.iscsemi.cn
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| Document |
 3DD8B Data Sheet
PDF 184.48KB |
| Distributor | Stock | Price | Buy |
|---|
