Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SC3585 |
Click to view a larger image
| Part Number | 2SC3585 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector Current IC= 35mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min) ·High gain: ︱ S21e ︱ 2 = 5.5 dB (typical) ( IC=5mA,f=2GHz) ·Gain bandwidth product fT = 10 GHZ (typical) (IC=10mA... |
| Features |
se Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter-Base Cutoff Current
hFE
DC Current Gain
fT
Current-Gain—Bandwidth Product
Cre
Output feedback capacitance
| S21e |2 Power gain
NF
Noise factor
CONDITIONS IC= 1uA ; IE= 0 VCB= 10V; IE= 0 VEB= 1V; IE= 0 IC= 10mA ; VCE= 6V VCE=6V,IC=10mA,f=1GHz VCB=10V,IE=0mA,f=1MHz VCE=6V,IC=10mA,f=2GHz VCE=6V,IC=5mA,f=2GHz
MIN TYP. MAX UNIT
20
V
0.1 μA
0.1 μA
50 150 300
10
GHz
0.65
pF
5.5
dB
2.5
dB
hFE Classifications step A B C D E label R43 R44 R45 hFE 60-100 90-140 130-180 170-250 250-300 NOTICE： ISC r... |
| Document |
 2SC3585 Data Sheet
PDF 209.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3580 |
Isahaya Electronics |
SMALL-SIGNAL TRANSISTOR |
|
| 2 | 2SC3581 |
Isahaya Electronics Corporation |
SMALL-SIGNAL TRANSISTOR |
|
| 3 | 2SC3582 |
NEC |
NPN Silicon Transistor |
|
| 4 | 2SC3582 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 5 | 2SC3583 |
NEC |
NPN Silicon Transistor |
|