IS66WVE1M16BLL ISSI 3.0V Core Async/Page PSRAM Datasheet, en stock, prix

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IS66WVE1M16BLL

ISSI
IS66WVE1M16BLL
IS66WVE1M16BLL IS66WVE1M16BLL
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Part Number IS66WVE1M16BLL
Manufacturer ISSI
Description PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 16Mb DRAM core device is organized as 1 Meg x 16 bits. These devices include ...
Features
 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 Page mode read access
 Interpage Read access : 55ns, 70ns
 Intrapage Read access : 20ns
 Low Power Consumption
 Asynchronous Operation < 30 mA
 Intrapage Read < 18mA
 Standby < 80 uA (max.)
 Deep power-down (DPD) < 3uA (Typ)
 Low Power Feature
 Temperature Controlled Refresh
 Partial Array Refresh
 Deep power-down (DPD) mode
 Operating temperature Range Industrial -40°C~85°C
 Packages: 48-ball TFBGA, 48-pin TSOP-I Notes : 1. The 48-pin TSOP-I package option is ...

Document Datasheet IS66WVE1M16BLL Data Sheet
PDF 450.66KB
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