डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP2907 | Power MOSFET PD -93906D
IRFP2907
AUTOMOTIVE MOSFET HEXFET® Power MOSFET
Typical Applications l Integrated Starter Alternator l 42 Volts Automotive Electrical Systems
D
VDSS = 75V
Benefits l Advanced Process Technology l |
International Rectifier |
|
IRFP2907 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFP2907,IIRFP2907
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de |
INCHANGE |
|
IRFP2907B | HEXFET Power MOSFET www.DataSheet4U.com
PD - 93777
IRFC2907B
HEXFET®
l
Power MOSFET Die in Wafer Form
D
100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack** l Ultra Low On-Resistance Elect |
International Rectifier |
|
IRFP2907PBF | Power MOSFET Typical Applications l Telecom applications requiring soft start
Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetit |
International Rectifier |
|
IRFP2907Z | AUTOMOTIVE MOSFET www.DataSheet4U.com
PD - 95873
AUTOMOTIVE MOSFET
IRFP2907Z
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetit |
International Rectifier |
|
IRFP2907Z | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFP2907Z,IIRFP2907Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
|
IRFP2907ZPBF | Power MOSFET AUTOMOTIVE MOSFET
PD - 95480
IRFP2907ZPbF
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Fr |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |