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IRFP2907ZPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFP2907ZPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFP2907ZPBF pdf
IRFP2907ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75 ––– –––
––– 0.069 –––
––– 3.5 4.5
2.0 ––– 4.0
V VGS = 0V, ID = 250µA
fV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 90A
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
180 ––– ––– S VDS = 25V, ID = 90A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 75V, VGS = 0V
––– ––– 250
VDS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 180 270
ID = 90A
Qgs Gate-to-Source Charge
––– 46 ––– nC VDS = 60V
fQgd
Gate-to-Drain ("Miller") Charge
––– 65 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 19 ––– ns VDD = 38V
tr Rise Time
––– 140 –––
ID = 90A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 97 –––
––– 100 –––
fRG = 2.5
VGS = 10V
LD Internal Drain Inductance
––– 5.0 ––– nH Between lead,
D
LS Internal Source Inductance
––– 13 –––
6mm (0.25in.)
from package
G
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
––– 7500 –––
––– 970 –––
––– 510 –––
––– 3640 –––
––– 650 –––
––– 1020 –––
and center of die contact
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 90
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 680
A showing the
integral reverse
G
––– ––– 1.3
fp-n junction diode.
S
V TJ = 25°C, IS = 90A, VGS = 0V
f––– 41 61 ns TJ = 25°C, IF = 90A, VDD = 38V
––– 59 89 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C,
L=0.13mH, RG = 25, IAS = 90A, VGS =10V.
Part not recommended for use above this value.
ƒ ISD 90A, di/dt 340A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
tested to this value in production.
ˆ Rθ is measured at TJ of approximately 90°C.
2 www.irf.com

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