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IRFP2907PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFP2907PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFP2907PBF pdf
IRFP2907PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
Min. Typ. Max.
75 ––– –––
––– 0.085 –––
––– 3.6 4.5
2.0 ––– 4.0
130 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 410 620
––– 92 140
––– 140 210
––– 23 –––
––– 190 –––
––– 130 –––
––– 130 –––
––– 5.0 –––
LS Internal Source Inductance
––– 13 –––
Ciss Input Capacitance
––– 13000 –––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 2100 –––
––– 500 –––
Coss
Coss
Output Capacitance
Output Capacitance
––– 9780 –––
––– 1360 –––
Coss eff.
Effective Output Capacitance …
––– 2320 –––
Source-Drain Ratings and Characteristics
Units
V
V/°C
mΩ
V
S
μA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 125A „
VDS = 10V, ID = 250μA
VDS = 25V, ID = 125A
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 125A
VDS = 60V
VGS = 10V„
VDD = 38V
ID = 125A
RG = 1.2Ω
VGS = 10V „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 209†
––– ––– 840
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 125A, VGS = 0V „
––– 140 210 ns TJ = 25°C, IF = 125A
––– 880 1320 nC di/dt = 100A/μs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 0.25mH
RG = 25Ω, IAS = 125A. (See Figure 12).
ƒ ISD 125A, di/dt 260A/μs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400μs; duty cycle 2%.
2
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
‡ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
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