| No. | Partie # | Fabricant | Description | Fiche Technique |
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uPI Semiconductor |
30V Asymmetric Dual N-Channel Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available Product Summary VDS Die1 30V RDS(ON) max (VGS=10V) 5.6mΩ ID (TC=25 °C) 59A Die2 30V 1.3mΩ 135A Applications Hi |
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