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QA3111N6N |
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| Part Number | QA3111N6N |
| Manufacturer | uPI Semiconductor |
| Description | The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to su... |
| Features |
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available
Product Summary
VDS Die1 30V
RDS(ON) max (VGS=10V)
5.6mΩ
ID (TC=25 °C)
59A
Die2 30V
1.3mΩ
135A
Applications
High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System CCFL Back-light Inverter
Pin Configuration
Ordering Information
Order Package Number Type
Top Marking
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QA3111N6N DFN5X6
QA3111N6N-DS-F0001, Feb. 2020
Copyright© uPI Semiconductor Corp. All Rights reserved.
1
www.upi-semi.com
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| Document |
 QA3111N6N Data Sheet
PDF 516.40KB |
| Distributor | Stock | Price | Buy |
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