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WEJ |
PNP TRANSISTOR Power dissipation PCM SOT-523 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR : 0.1 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ EL |
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WEJ |
PNP Transistor |
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WEJ |
PNP EPITAXIAL SILICON TRANSISTOR se Figure BVCBO BVCEO BVEBO ICBO IEBO HFE VCE(sat) VBE(sat) VBE(on) Cob fT NF -50 V IC=-100 A IE=0 -45 V IC=-1mA IB=0 -5 V IE=-100 A IC=0 -50 nA VCB=-50V, VC=0 -50 nA VCB=-5V, IC=0 60 200 600 VCE=-5V, IC=1mA -0.20 -0.7 V IC=-100mA, IB=-5mA |
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WEJ |
PNP Transistor Power dissipation PCM TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE : 1 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -300 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELE |
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WEJ |
PNP Transistor Power dissipation PD: 0.25 TRANSISTOR (PNP) TO-92S 1. EMITTER 2. COLLECTOR 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECT |
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