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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 12 |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 2 V30120C PIN 1 PIN 3 PIN 2 CASE 3 1 VF30120C PIN 1 PIN 3 PIN 2 2 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-2 |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Hal |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Gen 2 • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per J |
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Vishay |
Dual Common-Cathode Ultrafast Rectifier • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-26 |
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Vishay |
Dual Common-Cathode Ultrafast Rectifier • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-26 |
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Vishay |
Dual Common-Cathode Ultrafast Rectifier • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-26 |
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Vishay |
Dual Common-Cathode Ultrafast Rectifier • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-26 |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C m |
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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance 2 V30100SG PIN 1 PIN 2 CASE 3 1 VF30100SG PIN 1 PIN 2 2 3 1 • Meets MSL level 1, per J-STD-020, LF maximum peak o |
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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 2 V30120S PIN 1 PIN 2 CASE 3 1 VF30120S PIN 1 PIN 2 2 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package |
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Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V30120SG PIN 1 PIN 2 CASE 3 1 VF30120SG PIN 1 PIN 2 2 |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C m |
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