Vishay V12 fiche technique

No.	Partie #	Fabricant	Description
1	V12P6	Vishay	Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe
2	V12PM10	Vishay	Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe
3	BYV12-1000	Vishay	Fast Avalanche Sinterglass Diode • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 949539 MECHANICAL DATA Case: SOD-57 Termina
4	V12PM12	Vishay	High Current Density Surface-Mount Rectifier • Very low profile - typical height of 1.1 mm Available • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualifie
5	V12PM12-M3	Vishay	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe
6	V12PM12HM3	Vishay	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe
7	V12W60C-M3	Vishay	Dual Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of comp
8	V12P15	Vishay	Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe
9	V12P45	Vishay	Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe
10	V12PM6	Vishay	Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualifie
11	V12P8	Vishay	Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe
12	RCV1206e3	Vishay	Thick Film Chip Resistors • High operating voltage (up to 3 kV) • Low voltage coefficient of resistance (VCR): 25 ppm/V • UL 1676 recognition for RCV2010 e3 and RCV2512 e3 only; UL file no. E526561 • IEC 62368-1 ed. 3 compliant for RCV2010 e3 and RCV2512 e3 only • Material ca
13	BYV12-400	Vishay	Fast Avalanche Sinterglass Diode • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 949539 MECHANICAL DATA Case: SOD-57 Termina
14	BYV12-100	Vishay	Fast Avalanche Sinterglass Diode • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 949539 MECHANICAL DATA Case: SOD-57 Termina
15	V12P12	Vishay	Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe
16	CRHV1206	Vishay	Thick Film Chip Resistors • High voltage up to 3000 V • Outstanding stability < 0.5 % • Flow solderable Available • Custom sizes available Available • Automatic placement capability • Tape and reel packaging available • Termination style: 3-sided wraparound terminatio
17	V12WM100C-M3	Vishay	Dual Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of comp
18	V12PM15	Vishay	Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualifie
19	V12PM45	Vishay	Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.1 mm Available • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualifie
20	BYV12-600	Vishay	Fast Avalanche Sinterglass Diode • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 949539 MECHANICAL DATA Case: SOD-57 Termina