V12W60C-M3 Vishay Dual Trench MOS Barrier Schottky Rectifier Datasheet, en stock, prix

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V12W60C-M3

Vishay
V12W60C-M3
V12W60C-M3 V12W60C-M3
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Part Number V12W60C-M3
Manufacturer Vishay (https://www.vishay.com/)
Description www.vishay.com V12W60C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A TMBS® TO-252 (D-PAK) K A A V12W60C AK A HEATSINK FEATURES • Tren...
Features
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 6 A (TA = 125 °C) TJ max. Package 2x6A 60 V 90 A 0.47 V 150 °C TO-252 (D-PAK) Diode variation...

Document Datasheet V12W60C-M3 Data Sheet
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