| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.c |
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Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K • Not recommended for PCB bottom side wave mounting • Compliant to RoHS Dire |
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Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K • Not recommended for PCB bottom side wave mounting • Compliant to RoHS Dire |
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|
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K • Not recommended for PCB bottom side wave mounting • Compliant to RoHS Dire |
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