VBT2045C |
Part Number | VBT2045C |
Manufacturer | Vishay (https://www.vishay.com/) Siliconix |
Description | New Product VBT2045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A TMBS ® TO-263AB FEATURES • Trench MOS Schottky technolog... |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K • Not recommended for PCB bottom side wave mounting • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VBT2045C PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 45 V 160 A 0.41 V 150 °C M... |
Document |
VBT2045C Data Sheet
PDF 99.17KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VBT2045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | VBT2045C-E3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VBT2045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier | |
4 | VBT2060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VBT2060G |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |