| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRLR120, SiHLR120) • Straight lead (IRLU120, SiHLU120) • Available in tape and reMel • Logic-level gate drive Available • RDS(on) specified at VGS = 4 V and 5 V • Material c |
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Vishay |
Power MOSFET • Dynamic dV/dt Rating • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DE |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature Available • Fast switching • Ease of paralleling • Material categorization: for def |
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Vishay |
Power MOSFET 60 0.20 • Dynamic dV/dt Rating • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMP |
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Vishay |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIA |
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Vishay |
Power MOSFET • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPL |
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Vishay |
Power MOSFET • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS* • Sink to Lead Creepage Distance 4.8 mm COMPLIANT • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of para |
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Vishay |
Power MOSFET • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Ease of Paralleling • Lead (Pb)-free RoHS CO |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPL |
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Vishay Siliconix |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMP |
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Vishay Siliconix |
Power MOSFET • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Logic-level gate drive Available • RDS (on) specified at VGS = 4 V and 5 V • 175°C operating temperature Available • Fast switching • Material categorization: for definitio |
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Vishay Siliconix |
Power MOSFET • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Logic-level gate drive Available • RDS (on) specified at VGS = 4 V and 5 V • 175°C operating temperature Available • Fast switching • Material categorization: for definitio |
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Vishay |
Power MOSFET 100 0.16 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive •R DS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature •F ast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC Available |
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Vishay |
Power MOSFET • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching Available • Ease of paralleling • Material categorization: for definitions of compliance pl |
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Vishay |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature Available • Fast switching • Ease of paralleling • Material categorization: for def |
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Vishay |
Power MOSFET |
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Vishay |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Material categorization: For definitions of compliance pl |
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Vishay |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Compliant to RoHS Directive 2002/95/EC Available RoHS* C |
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Vishay |
Power MOSFET • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Fast switching • Ease of paralleling • Material categorization |
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Vishay |
Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching Available RoHS* COMPLIANT • Ease of paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/9 |
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