| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay |
Small Signal Transistors • NPN Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary types, BCW61 Series PNP transistors are recommended. Mechanical Data Case: SO |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Aluminum Capacitors • Original SMPS output capacitors • Minimal ESR change • High ripple current capability Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 QUICK REFERENCE DATA DESCRIPTION VALUE Nominal case |
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Vishay |
Aluminum Capacitors • Original SMPS output capacitors • Minimal ESR change • High ripple current capability Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 QUICK REFERENCE DATA DESCRIPTION VALUE Nominal case |
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Vishay |
Aluminum Capacitors • Original SMPS output capacitors • Minimal ESR change • High ripple current capability Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 QUICK REFERENCE DATA DESCRIPTION VALUE Nominal case |
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Vishay |
Ultrafast Soft Recovery Diode • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and qualified JEDEC®-JESD47 according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Available • Reduced RFI and EM |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Dual Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Dual Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of comp |
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Vishay |
Fast Soft Recovery Rectifier Diode DESCRIPTION The 60EPF.. and 60CPF.. fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature a |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Aluminum Capacitor • +105 °C • Suitable for long life applications Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 QUICK REFERENCE DATA DESCRIPTION VALUE Nominal case size Ø D x L in mm 0.236" x 0.433" [ |
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Vishay |
Three Phase Bridge • Blocking voltage up to 1800 V • High surge capability • High thermal conductivity package, electrically insulated case • Excellent power volume ratio • 3600 VRMS isolating voltage • UL pending • Designed for industrial level • Material categorizati |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22 |
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Vishay Siliconix |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak |
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Vishay |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263A |
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Vishay Siliconix |
(MBR40H35CT - MBR40H60CT) Dual Schottky Barrier Rectifiers • • • • • Dual rectifier construction, positive center tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in high frequency inverters, free wheeling, and polarity prote |
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