| No. | Partie # | Fabricant | Description | Fiche Technique |
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VBsemi |
Dual N-Channel MOSFET • TrenchFET® power MOSFET • 100 % Rg and UIS tested D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drai |
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VBsemi |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Low-Side MOSFET for Synchronous Buck - Game Machine - PC D G S N-Channel MOSFET A |
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VBsemi |
N-Channel MOSFET • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 % Rg and UIS tested APPLICATIONS • Power supply - Secondary synchronous rectification • DC/DC converter • Power tool |
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VBsemi |
N-Channel MOSFET • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested TO-220 D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-S |
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VBsemi |
N-Channel MOSFET • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • DC/DC Conversion - System Power RoHS COMPLIANT G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Pa |
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