logo

VBsemi FQD DataSheet

No. Partie # Fabricant Description Fiche Technique
1
FQD50N06

VBsemi
N-Channel MOSFET

• 175 °C Junction Temperature
• TrenchFET® Power MOSFET
• Material categorization: D TO-252 GD S G S N-Channel MOSFET www.VBsemi.tw ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltag
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact