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600V N-CHANNEL POWER MOSFET * RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast body diode MOSFET technology * Ultra Low gate charge (typical 16nC) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING I |
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