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F2N60 |
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| Part Number | F2N60 |
| Manufacturer | UTC |
| Description | The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better charact... |
| Features |
* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast body diode MOSFET technology * Ultra Low gate charge (typical 16nC) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free F2N60L-TN3-T F2N60G-TN3-T F2N60L-TN3-R F2N60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel F2N60G-TN3-T (1)Packing Type (2)Package Type (3)Green Package (1) R: Tape Reel (2) TN3: TO-252 (3)... |
| Document |
 F2N60 Data Sheet
PDF 223.80KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | F2N60 |
ROUM |
2A 600V N-channel Enhancement Mode Power MOSFET |
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| 2 | F2N60 |
Pan Jit International |
PJF2N60 |
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| 3 | F2N60 |
Red Diamond Optoelectronics |
N-CHANNEL POWER MOSFET |
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| 4 | F2001 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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| 5 | F2002 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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