| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
UTC |
TRIAC |
|
|
|
|
UTC |
TRIACS erating Junction Temperature Tj 125 °C Storage Temperature Tstg -40~150 °C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed |
|
|
|
|
UTC |
SCR MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R301-017.D BT151 SCR ABSOLUTE MAXIMUM RATING (TJ = 25°C, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT BT151-5 500 (Note 2) Repetitive Peak |
|
|
|
|
UTC |
SCRs tate Current (half sine wave; TJ = 25 °C prior to surge) t=10ms t=8.3ms ITSM I2t for Fusing (t = 10 ms) I2t 35 38 A 6.1 A2s Repetitive Rate of Rise of On-State Current After Triggering (ITM = 10 A; IG = 50 mA; dIG /dt = 50 mA/ms) dIT /dt 5 |
|
|
|
|
UTC |
TRIACS ower (over any 20ms period) PG(AV) 0.5 W Operating Junction Temperature Tj 125 °C Storage temperature Tstg -40~150 °C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. Th |
|
|
|
|
UTC |
TRIAC |
|
|
|
|
UTC |
SCR MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R301-017.D BT151 SCR ABSOLUTE MAXIMUM RATING (TJ = 25°C, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT BT151-5 500 (Note 2) Repetitive Peak |
|
|
|
|
UTC |
TRIACS ℃ Storage temperature Tstg -40 ~ 150 ℃ Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exce |
|
|
|
|
UTC |
THYRISTOR * High bidirectional blocking voltage capability * High thermal cycling performance SYMBOL SCR A K G ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package BT152L-x-TA3-T BT152G-x-TA3-T TO-220 BT152L-x-TF3-T BT152G-x-TF |
|
|
|
|
UTC |
TRIAC |
|
|
|
|
Unisonic Technologies |
SCR C prior to surge t=10ms ITM=2A;IG=10mA; dIG/dt=100mA/µs 0.5 0.8 8 9 A A A I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage I2t DIT/dt IGM VGM VRGM 0.32 50 1 |
|
|
|
|
UTC |
SCR MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R301-017.D BT151 SCR ABSOLUTE MAXIMUM RATING (TJ = 25°C, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT BT151-5 500 (Note 2) Repetitive Peak |
|
|
|
|
UTC |
HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR * Collector-Emitter Voltage: BVCEO=50V * Collector Current up to 150mA * High hFE Linearity * Complement to MMBT1015 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBT1815L-x-AC3-R MMBT1815G-x-AC3-R SOT-113 MMBT1815L- |
|
|
|
|
UTC |
TRIACS ms period) PG(AV) 0.5 W ℃ Storage temperature Tstg -40 ~ 150 ℃ Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of |
|
|
|
|
UTC |
PNP TRANSISTOR -1 -2 A A Total Collector Dissipation PC 350 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute m |
|
|
|
|
UTC |
LOW FREQUENCY PNP AMPLIFIER TRANSISTOR * Collector-Emitter Voltage: BVCEO= -50V * Collector current up to 150mA * High hFE linearity * Complement to MMBT1815 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBT1015L-x-AC3-R MMBT1015G-x-AC3-R SOT-113 MMBT1015 |
|
|
|
|
UTC |
NPN TRANSISTOR MMBT1616A VCBO 60 120 V Collector to Emitter Voltage MMBT1616 MMBT1616A VCEO 50 60 V Emitter to Base Voltage VEBO 6 V Collector Current DC IC 1A Collector Current Pulse IC 2A Total Collector Dissipation PD 350 mW Junction Tempe |
|
|
|
|
UTC |
NPN TRANSISTOR MMBT1616A VCBO 60 120 V Collector to Emitter Voltage MMBT1616 MMBT1616A VCEO 50 60 V Emitter to Base Voltage VEBO 6 V Collector Current DC IC 1A Collector Current Pulse IC 2A Total Collector Dissipation PD 350 mW Junction Tempe |
|
|
|
|
UTC |
PNP TRANSISTOR -1 -2 A A Total Collector Dissipation PC 350 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute m |
|