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BT150 |
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| Part Number | BT150 |
| Manufacturer | UTC |
| Description | Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications includ... |
| Features |
tate Current (half sine wave; TJ = 25 °C prior to surge)
t=10ms t=8.3ms
ITSM
I2t for Fusing (t = 10 ms)
I2t
35 38
A
6.1
A2s
Repetitive Rate of Rise of On-State Current After Triggering (ITM = 10 A; IG = 50 mA; dIG /dt = 50 mA/ms)
dIT /dt
50
A/μs
Peak Gate Current Peak Gate Voltage
IGM
2
A
VGM
5
V
Peak Reverse Gate Voltage
VRGM
5
V
Peak Gate Power (over any 20 ms period)
PGM
5
W
Average Gate Power Operating Junction Temperature
PG(AV)
0.5
W
TJ
125 (Note 3)
°C
Storage Temperature
TSTG
-40 ~150
°C
Notes: 1. Absolute maximum ratings are those values beyond wh... |
| Document |
 BT150 Data Sheet
PDF 316.93KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BT150 |
NXP |
Thyristors logic level |
|
| 2 | BT150-500R |
NXP |
Thyristors logic level |
|
| 3 | BT150-600R |
NXP |
Thyristors logic level |
|
| 4 | BT150-800R |
NXP |
Thyristors logic level |
|
| 5 | BT150M |
NXP |
Thyristors logic level |
|