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UNIKC |
N&P-Channel MOSFET YMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = |
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UNIKC |
N-Channel MOSFET Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250mA 150 VDS = VGS, ID = 250mA 1 VDS = 0V, VGS = ±20V VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125 °C V 2 3 |
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UNIKC |
N-Channel MOSFET GS = 0V, ID = 250mA 150 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.5 2.5 4.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V , TJ = 125 °C 1 10 |
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UNIKC |
N-Channel MOSFET MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance1 Forward Transconductance1 On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gfs ID(ON) |
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UNIKC |
N-Channel MOSFET 0V, ID = 250mA 100 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2 3 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V , TJ = 125 °C 1 10 On-State Dr |
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UNIKC |
N-Channel MOSFET 0V, ID = 250mA 100 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V , TJ = 125 °C On-State Drain Current1 ID( |
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UNIKC |
N-Channel MOSFET 0V, ID = 250mA 100 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2 3 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V , TJ = 125 °C 1 10 On-State Dr |
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UNIKC |
N-Channel Transistor ource Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 100 2.0 3.0 4.0 ±250 Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V VDS = 80V, VGS |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel Transistor |
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UNIKC |
N-Channel MOSFET oltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 25 1 1.5 3 ±250 Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 125 °C 1 1 |
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UNIKC |
N&P-Channel MOSFET |
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