No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
UNIKC |
N-Channel MOSFET Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 250 V 1 2 3 ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 250V, VGS = 0V VDS = 200V, VGS = 0V , TJ = |
|
|
|
UNIKC |
N-Channel MOSFET own Voltage V(BR)DSS VGS = 0V, ID = 250mA 100 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2 3 4 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V , T |
|
|
|
UNIKC |
N-Channel MOSFET |
|
|
|
UNIKC |
N-Channel MOSFET wn Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 200 V 1 2 3 ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, T |
|
|
|
UNIKC |
N-Channel MOSFET own Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 250 V 1 2 3 ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 250V, VGS = 0V VDS = 200V, VGS = 0V, |
|
|
|
UNIKC |
N-Channel Transistor |
|
|
|
UNIKC |
N-Channel MOSFET |
|
|
|
UNIKC |
N-Channel MOSFET |
|
|
|
UNIKC |
N-Channel Transistor |
|