| No. | Partie # | Fabricant | Description | Fiche Technique |
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UNIKC |
MOSFET D = 250mA 30 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.0 1.5 3.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TC = 125 °C 1 10 On-State Drai |
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UNIKC |
N-Channel Enhancement Mode MOSFET erwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 Input Ca |
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UNIKC |
N-Channel MOSFET ted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 600 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V Gate |
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UNIKC |
MOSFET |
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UNIKC |
MOSFET |
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UNIKC |
MOSFET |
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UNIKC |
MOSFET |
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UNIKC |
P-Channel MOSFET |
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UNIKC |
P-Channel MOSFET |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
MOSFET |
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UNIKC |
MOSFET |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
P-Channel MOSFET |
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UNIKC |
N-Channel MOSFET J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, V |
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UNIKC |
N-Channel MOSFET J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, V |
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