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Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor , Junction to Case Symbol RθJC Max 0.8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector –Emitter |
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Tyco Electronics |
N-CHANNEL MOS BROADBAND RF POWER FET a vertical structure with a planar design, thus avoiding the processing difficulties associated with V – groove vertical power FETs. M/A-COM Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the con |
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Tyco |
Microwave Pulse Power Transistors s mW/°C °C CASE 332A –03, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 25 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF |
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Tyco |
The RF Line Microwave Power Transistor e 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 55 55 3.5 1.25 25 143 –65 to +200 200 Unit Vdc Vdc Vdc mAdc Watt mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case |
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Tyco Electronics |
RF POWER TRANSISTOR l RθJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector –Emitter Breakdown Voltage (IC = |
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Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor Junction to Case Symbol RθJC Max 2.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector –Base Brea |
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Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor ymbol RθJC Max 0.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector-Emitter Breakdown Voltage |
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Tyco Electronics |
RF POWER TRANSISTOR RMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.75 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitter Brea |
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Tyco Electronics |
N-CHANNEL MOS BROADBAND RF POWER FET ing Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ±40 5.0 100 0.571 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C MAXIMUM RATINGS THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC |
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Tyco Electronics |
N-CHANNEL MOS LINEAR RF POWER FET L CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should |
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Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET S ID PD Tstg TJ Value 65 65 ±40 32 500 2.85 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.35 Unit °C/W NOTE — CAUTION — MOS devices are susceptibl |
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Tyco |
MICROWAVE POWER TRANSISTOR to Case (3) Symbol RθJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Collector –Base Breakdown |
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Tyco |
MICROWAVE POWER TRANSISTOR Value 65 65 3.5 29 1460 8.3 – 65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.12 Unit °C/W NOTES: 1. Under pulse RF operating conditions. 2. The |
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Tyco |
MICROWAVE POWER TRANSISTOR 1590 9.1 –65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.11 Unit °C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are desig |
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Tyco |
MICROWAVE POWER TRANSISTORS tion Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 65 65 3.5 14 700 4.0 –65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.25 Unit °C/W NOT |
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Tyco |
MICROWAVE POWER TRANSISTORS 55 55 3.5 15 380 2.17 –65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.46 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) C |
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Tyco |
MICROWAVE POWER TRANSISTORS THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 25 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitter |
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Tyco Electronics |
RF POWER TRANSISTOR 0) Collector –Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter –Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)EBO 18 36 4.0 — — — — — — Vdc Vdc Vdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 4 |
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Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor ISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector –Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0) Collector –Base Breakdown Vo |
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Tyco Electronics |
The RF Line NPN Silicon RF Power Transistor ERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector –Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector –Base Breakdown |
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